Band theory applied to semiconductors, M. Lannoo; optical properties and charge transport, R.G. Ulbrich; intrinsic point defecta in semiconductors, G. Watkins; deep centers in semiconductors, H. Feichtinger; equilibria, nonequilibria, diffusion and precipitation, U.M. Gasele and T.Y. Tan; dislocations, H. Alexander and H. Teichler; grain boundaries in semiconductors, J.L. Rouviere et al; interfaces, A. Ourmazd et al; the hall effect in quantum wires, A.M. Chang; material properties of hydrogenated amorphous silicon, R.A. Street and K. Winer; high - temperature properties of 3d - transition elements in silicon, W. Schroter et al.