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Fundamentals of Modern VLSI Devices Yuan Taur (IBM T J Watson Research Center, New York)

Fundamentals of Modern VLSI Devices von Yuan Taur (IBM T J Watson Research Center, New York)

Fundamentals of Modern VLSI Devices Yuan Taur (IBM T J Watson Research Center, New York)


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Zusammenfassung

This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. It can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising microelectronics engineers.

Fundamentals of Modern VLSI Devices Zusammenfassung

Fundamentals of Modern VLSI Devices Yuan Taur (IBM T J Watson Research Center, New York)

This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.

Fundamentals of Modern VLSI Devices Bewertungen

' ... well-written classroom text on VLSI devices ... this book will also prove valuable to practicing designers and researchers because of the many advanced topics included, covers a wide range of material for its size ... The book is logically organized. Both the ideas and the presentation are first-rate. The typesetting and diagrams are superb.' Computing Reviews
'Taur and Ning have written a book that will surely be referenced for many years. it is clear that the authors know what they are talking about (they are both IEEE Fellows and long-time employees of IBM). they draw heavily from their experience of industrial VLSI technology, and cover subjects such as device optimization, trade-offs between power consumption and packing density, and physical limits to scaling.' Carol-Mikael Zetterling, Royal Insitute of Technology, Stockholm
' ... a book that will surely be referenced for many years.' Carl-Mikael Zetterling, Amazon

Inhaltsverzeichnis

1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performance factors; Appendices.

Zusätzliche Informationen

GOR013838864
9780521559591
0521559596
Fundamentals of Modern VLSI Devices Yuan Taur (IBM T J Watson Research Center, New York)
Gebraucht - Sehr Gut
Broschiert
Cambridge University Press
19981013
496
N/A
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