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Electromigration in Thin Films and Electronic Devices Choong-Un Kim (University of Texas at Arlington, USA)

Electromigration in Thin Films and Electronic Devices By Choong-Un Kim (University of Texas at Arlington, USA)

Electromigration in Thin Films and Electronic Devices by Choong-Un Kim (University of Texas at Arlington, USA)

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Electromigration in Thin Films and Electronic Devices Summary

Electromigration in Thin Films and Electronic Devices: Materials and Reliability by Choong-Un Kim (University of Texas at Arlington, USA)

Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area. Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints. With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field.

About Choong-Un Kim (University of Texas at Arlington, USA)

Choong-Un Kim is Professor of Materials Science and Engineering at the University of Texas at Arlington, USA.

Table of Contents

Contributor contact details Part I: Introduction Chapter 1: Modeling of electromigration phenomena Abstract: 1.1 Introduction 1.2 Analytical methods 1.3 Numerical methods 1.4 Conclusion Chapter 2: Modeling electromigration using the peridynamics approach Abstract: 2.1 Introduction 2.2 Previous approaches to modeling electromigration (EM) 2.3 Peridynamics (PD) 2.4 PD and EM 2.5 Illustrative example 2.6 Computational requirements: present and future 2.7 Conclusions Chapter 3: Modeling, simulation, and X-ray microbeam studies of electromigration Abstract: 3.1 Introduction 3.2 Modeling and simulation approaches 3.3 Experimental, modeling and simulation findings 3.4 Conclusions 3.5 Acknowledgments Part II: Electromigration in copper interconnects Chapter 4: X-ray microbeam analysis of electromigration in copper interconnects Abstract: 4.1 Introduction 4.2 Samples and X-ray microdiffraction methods 4.3 Electromigration (EM)-induced strains in conductor lines 4.4 Conclusions and summary 4.6 Appendix Chapter 5: Voiding in copper interconnects during electromigration Abstract: 5.1 Introduction 5.2 Void nucleation 5.3 Void growth 5.4 Immortality 5.5 Future trends 5.6 Acknowledgements Chapter 6: The evolution of microstructure in copper interconnects during electromigration Abstract: 6.1 Introduction 6.2 Copper microstructure evolution during electromigration 6.3 Plasticity and materials degradation mechanisms in copper interconnects 6.4 Implications for the reliability of advanced copper interconnect schemes 6.5 Conclusions and future trends Chapter 7: Scaling effects on electromigration reliability of copper interconnects Abstract: 7.1 Introduction 7.2 Mass transport during electromigration (EM) 7.3 Effect of via scaling on EM reliability 7.4 Multi-linked statistical tests for via reliability 7.5 Methods to improve the EM lifetime 7.6 Conclusion and future trends 7.7 Acknowledgements Chapter 8: Electromigration failure in nanoscale copper interconnects Abstract: 8.1 Process solutions being developed for copper interconnects 8.2 Electromigration (EM) scaling by generation 8.3 Suppression by metal capping: blocking rate-limiting EM pathways 8.4 Copper microstructure impact 8.5 Conclusions 8.6 Acknowledgements Part III: Electromigration in solder Chapter 9: Electromigration-induced microstructural evolution in lead-free and leadaEUROtin solders Abstract: 9.1 Introduction 9.2 Intermetallic compound formation 9.3 Void formation 9.4 Formation of whisker and hillock 9.5 Grain reorientation and grain rotation 9.6 Dissolution and recrystallization Chapter 10: Electromigration in flip-chip solder joints Abstract: 10.1 Introduction 10.2 Electromigration (EM)-induced voiding failure of solder interconnects 10.3 Joule heating-enhanced dissolution of under bump metallurgy (UBM) and the diffusion of on-chip metal interconnects 10.4 Stress-related degradation of solder interconnects under EM 10.5 Thermomigration (TM) behavior in solder interconnects under a thermal gradient 10.6 Conclusions 10.7 Acknowledgements Index

Additional information

NLS9780081016961
9780081016961
0081016964
Electromigration in Thin Films and Electronic Devices: Materials and Reliability by Choong-Un Kim (University of Texas at Arlington, USA)
Choong-Un Kim (University of Texas at Arlington, USA)
Woodhead Publishing Series in Electronic and Optical Materials
New
Paperback
Elsevier Science & Technology
2016-08-19
352
N/A
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