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Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications Peter Capper

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications By Peter Capper

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications by Peter Capper


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Summary

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area.

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications Summary

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications by Peter Capper

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Table of Contents

Part One: Growth techniques. Bulk growth techniques. Liquid phase epitaxy. Metal-organic vap our phase epitaxy. Molecular beam epitaxy of HgCdTe. Part Two: Materials characterisation. Optical properties of MCT. Transport properties of narrow-gap II-VI compounds. Intrinsic and extrinsic doping. Point defects in narrow-gap II-VI compounds. Diffusion in narrow-gap II-VI compounds. Surfaces/interfaces of narrow-gap II-VI compounds. Trends in structural defects in narrow-gap II-VI semiconductors. Quantum wells and superlattices. Properties of diluted magnetic semiconductors. Part Three: Device applications. Photoconductive detectors in HgCdTe and related alloys. Photovoltaic IR detectors. Non-equilibrium devices in HgCdTe. Emission devices. Photoelectromagnetic, magnetoconcentration and Dember infrared detecors. Solar cells based on CdTe. Radiation detectors. Index.

Additional information

NPB9780412715600
9780412715600
0412715600
Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications by Peter Capper
New
Hardback
Chapman and Hall
1997-10-31
592
N/A
Book picture is for illustrative purposes only, actual binding, cover or edition may vary.
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