Preface. Section I: Physics and Technology. Physics and Technology of Semiconductor Nanostructures; H. Luth. Molecular Beam Epitaxy: Physics and Technology; M. Henini. 6H-SiC(001)/AlN/GaN Epitaxial Heterojunctions and Their Valence Band Offset; A. Rizzi. Optical Properties of Antimonide Based Heterostructures Grown by All-Organometallic Vapour Phase Epitaxy; T. Tuomi. MOVPE Technology for Multiwafer Production: Ga-Al-In-N Heterostructures and Optical and Electrical Properties of Deposited Layers; M. Deschler, et al. Molecular Beam Epitaxy of Narrow-Gap III-V Antimonides for Infrared Detectors and Sources; G. Borghs, et al. The Stability of the Misfit Dislocation Array at the Substrate-Epitaxial Layer Interface; E. Dobrocka, et al. Surface Reconstruction Processes in the Scope of the BCF Theory of Crystal Growth; D. Nohavica. Influence of Si Doping on Epitaxial Lateral Overgrowth of GaAs; Z.R. Zytkiewicz, D. Dobosz. Temperature Dependent Quasiplateaux of Hall Effect in Multi-delta-Layers; J.J. Mares, et al. Self-Consistent Analysis of Electronic Structure of Coupled delta-Doped Layers in GaAs; J. Osvald, E. Burian. Semiquantal Dynamics of Electrons in Quantum Heterostructures; L.V. Yurchenko, V.B. Yurchenko. Phase-Shift Analysis of Two-Dimensional Carrier-Carrier Scattering; A. Moskova, M. Mosko. Carrier-Impurity Collisions in a Narrow Quantum Wire: Born Approximation Versus Exact Solution; P. Vagner, M. Mosko. Low Temperature Hydride Vapor Phase Epitaxy of GaN Layers on Different Substrates; R. Fornari, et al. Study of Gallium Nitride Films Grown by MOCVD; R. Paszkiewicz, et al. A Comparison of Galvanomagnetic Properties of GaN Epitaxial Layers Grown on Silicon and Sapphire Substrates; K. Somogyi, Yu.V. Zhilyaev. The Effectof the Substrate Thermal Stresses on the Misfit Dislocation Generation; E. Dobročka. Experimental Study of the Thermal Decomposition of Heteroepitaxial and Bulk InP; F. Riesz, et al. Antiphase Boundaries in the Ordered InGaP Epitaxial Layers Prepared by MOCVD; M. Harvanka, et al. Critical Thickness Investigation of InxGa1-xAs/GaAs by X-Ray Measurements; M. Tlaczala, et al. MOVPE Growth of InGaP/GaAs Interfaces; R. Kudela, et al. GaAs and InP on Si with InGaP Buffer Layers; H.-H. Wehmann, et al. Crystal Structure and Photoluminescence of In1-xGaxAs Heteroepitaxial Layers Grown on InP Substrates; V.A. Bykovsky, et al. Investigation of InxGa1-xAs/GaAs Heterostructures by Electrochemical Method; A. Nemcsics, L. Dobos. Technological and Physical Aspects of the Improvement of Uniformity of Pure and Lightly Doped GaAs Epitaxial Layers; V.A. Bykovsky, et al. Characterization of InP Layers Prepared by LPE Using Ytterbium and Erbium Admixture; O. Prochazkova, et al. Characterization of InP:Zn Layers by Photoluminescence and Photo-Electrochemical C-V Profiling; V.F. Andrievski, et al. Spectroscopic Ellipsometry: Application to Complex Optoelectronic Layer Systems; B. Rheinlander, et al. Section II: Heterostructures and Devices. InGaP/GaAs Carbon-Doped Heterostructures for Heterojunction Bipolar Transistors; Q.J. Hartmann, et al. InxGa1-xP Quantum Wire Structures Grown by MOVPE Technique; J. Novak. Low-Temperature Grown Molecular-Beam Epitaxial GaAs for Terahertz Photomixing; P. Kordos. InP-HEMT-Based Digital Circuit Technology; I. Adesida, A. Mahajan. Layers and Heterostructures for High
