Name: Nanoscaled Semiconductor-on-Insulator Structures and Devices By S. Hall
SKU: 9781402063794
Price: 157.69 USD
Availability: InStock

Nanoscaled Semiconductor-on-Insulator Structures and Devices Summary

Nanoscaled Semiconductor-on-Insulator Structures and Devices by S. Hall

This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore's law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.

Introduction.- Nanoscaled SOI Material and Device Technologies.- Status and Trends in SOI nanodevices; F. Balestra.- Non-planar devices for nanoscale CMOS; M.C. Lemme et al.- High-k dielectric stacks for nanoscaled SOI devices; S. Hall et al.- Nanoscaled semiconductor heterostructures for CMOS transistors formed by ion implantation and hydrogen transfer; V. Popov et al.- Fluorine - Vacancy Engineering: A viable solution for dopant diffusion suppression in SOI substrates; H.A.W. El Mubarek, P. Ashburn.- Suspended Silicon-On-Insulator nanowires for the fabrication of quadruple gate MOSFETs; V. Passi et al.- Physics of Novel Nanoscaled SemOI Devices.- Integration of silicon Single-Electron Transistors operating at room temperature; T. Hiramoto.- SiGe nanodots in electro-optical SOI devices; A.V. Dvurechenskii et al.- Nanowire quantum effects in trigate SOI MOSFETs; J.-P. Colinge.- Semiconductor nanostructures and devices; J. Knoch, H. Luth.- MugFET CMOS process with midgap gate material; W. Xiong et al.- Doping fluctuation effects in multiple-gate SOI MOSFETs; C.A. Colinge et al.- SiGeC HBTs: impact of C on device performance; I.Z. Mitrovic et al.- Reliability and Characterization of Nanoscaled SOI Devices.- Noise research of nanoscaled SOI devices; N. Lukyanchikova.- Electrical characterization and special properties of FINFET structures; T. Rudenko et al.- Substrate effect on the output conductance frequency response of SOI MOSFETs; V. Kilchytska et al.- Investigation of compressive strain effects induced by STI and ESL; S. Zaouia et al.- Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology; A. Nazarov et al.- Theory and Modeling of Nanoscaled Devices.- Variability in nanoscale UTB SOI devices and its impact on circuits and systems; A. Asenov, K. Samsudin.- Electron transport in Silicon-On-Insulator nanodevices; F. Gamiz et al.- All quantum simulation of ultrathin SOIMOSFETs; A. Orlikovsky et al.- Resonant tunneling devices on SOI basis; B. Majkusiak.- Mobility modeling in SOI FETs for different substrate orientations and strain conditions; V. Sverdlov et al.- Three-dimensional (3-D) analytical modeling of the threshold voltage, DIBL and subthreshold swing of cylindrical GATE All Around MOSFETs; H.A. El Hamid et al. Authors Index.

Additional information

Sku

NLS9781402063794

ISBN 13

9781402063794

ISBN 10

B017N07G5G

Title

Nanoscaled Semiconductor-on-Insulator Structures and Devices by S. Hall

Author

S. Hall

Series

NATO Science for Peace and Security Series B: Physics and Biophysics

Condition

New

Binding type

Paperback

Publisher

Springer-Verlag New York Inc.

Year published

2007-07-06

Number of pages

369

Prizes

N/A

Cover note

Book picture is for illustrative purposes only, actual binding, cover or edition may vary.

Note

This is a new book - be the first to read this copy. With untouched pages and a perfect binding, your brand new copy is ready to be opened for the first time

Nanoscaled Semiconductor-on-Insulator Structures and Devices S. Hall

Nanoscaled Semiconductor-on-Insulator Structures and Devices by S. Hall

Summary

Nanoscaled Semiconductor-on-Insulator Structures and Devices Summary

Nanoscaled Semiconductor-on-Insulator Structures and Devices by S. Hall

Table of Contents

Additional information

Customer Reviews - Nanoscaled Semiconductor-on-Insulator Structures and Devices