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Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing Su-Ting Han (Institute of Microscale Optoelectronics, Shenzhen University, China)

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing By Su-Ting Han (Institute of Microscale Optoelectronics, Shenzhen University, China)

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing by Su-Ting Han (Institute of Microscale Optoelectronics, Shenzhen University, China)


Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing Summary

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing by Su-Ting Han (Institute of Microscale Optoelectronics, Shenzhen University, China)

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices.

About Su-Ting Han (Institute of Microscale Optoelectronics, Shenzhen University, China)

Su-Ting Han is an Associate Professor at the Institute of Microscale Optoelectronics, Shenzhen University, China. She received her MSc degree in Analytical Chemistry from Hong Kong Baptist University and her PhD degree in Physics and Materials Science from City University of Hong Kong. Her research interests include functional electronic devices and flexible, stretchable, and wearable electronics. Ye Zhou is an IAS Fellow in the Institute for Advanced Study, Shenzhen University. His research interests include flexible and printed electronics, organic/inorganic semiconductors, surface and interface physics, nanostructured materials, and nano-scale devices for technological applications, such as logic circuits, data storage, photonics and sensors.

Table of Contents

1. Introduction to photo-electroactive non-volatile memory 2. Characteristics and mechanisms in resistive switching memories 3. Memory characteristics and mechanisms in transistor based memories 4. Two-terminal optoelectronic memory device 5. Three-terminal optoelectronic memory device 6. Synaptic devices based on organic field-effect transistors 7. Ionic synergetically coupled electrolyte gated transistors for neuromorphic engineering applications 8. One-dimensional materials for photo-electroactive memories and synaptic devices 9. Novel photo-electroactive memories and neuromorphic devices based on nanomaterials 10. Organic and Hybrid Photo-Electroactive Polymer for Memories and Neuromorphic Computing 11. Metal oxide materials for photo-electroactive memories and neuromorphic computing systems 12. Perovskites for photo-tunable memories and neuromorphic computing 13. Chalcogenide materials for optoelectronic memory and neurmorphic computing 14. Device challenges, possible strategies and conclusions

Additional information

NLS9780128197172
9780128197172
012819717X
Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing by Su-Ting Han (Institute of Microscale Optoelectronics, Shenzhen University, China)
New
Paperback
Elsevier Science Publishing Co Inc
2020-05-27
352
N/A
Book picture is for illustrative purposes only, actual binding, cover or edition may vary.
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