1. : SEMICONDUCTORS, JUNCTIONS, AND MOSFET OVERVIEW; 1.1 INTRODUCTION; 1.2 SEMICONDUCTORS; 1.2.1 INTRINSIC SEMICONDUCTORS, FREE ELECTRONS, AND HOLES; 1.2.2 EXTRINSIC SEMICONDUCTORS; 1.2.3 EQUILIBRIUM IN THE ABSENCE OF ELECTRIC FIELD; 1.2.4 EQUILIBRIUM IN THE PRESENCE OF ELECTRIC FIELD; 1.2.5 SEMICONDUCTORS IN NONEQUILIBRIUM; QUASI-FERMI LEVELS; 1.2.6 RELATIONS BETWEEN CHARGE DENSITY, ELECTRIC FIELD, AND; POTENTIALS; POISSON'S EQUATION; 1.3 CONDUCTION; 1.3.1 TRANSIT TIME; 1.3.2 DRIFT; 1.3.3 DIFFUSION; 1.3.4 TOTAL CURRENT; 1.4 CONTACT POTENTIALS; 1.5 THEPN JUNCTION; 1.6 OVERVIEW OF THE MOS TRANSISTORS; 1.6.1 BASIC STRUCTURE; 1.6.2 A QUALITATIVE DESCRIPTION OF MOS TRANSISTOR OPERATION; 1.6.3 A FLUID DYNAMICAL ANALOG; 1.6.4 MOS TRANSISTOR CHARACTERISTICS; 1.7 FABRICATION PROCESSES AND DEVICE FEATURES; 1.8 A BRIEF OVERVIEW OF THIS BOOK; REFERENCES; PROBLEMS; 2. : THE TWO TERMINAL MOS STRUCTURE; 2.1 INTRODUCTION; 2.2 THE FLAT-BAND VOLTAGE; 2.3 POTENTIAL BALANCE AND CHARGE BALANCE; 2.4 EFFECT OF GATE - BODY VOLTAGE ON SURFACE CONDITION; 2.4.1 FLAT -BAND CONDITION; 2.4.2 ACCUMULATION; 2.4.3 DEPLETION AND INVERSION; 2.4.4 GENERAL ANALYSIS; 2.5 ACCUMULATION AND DEPLETION; 2.6 INVERSION; 2.6.1 GENERAL RELATIONS AND REGIONS OF INVERSION; 2.6.2 STRONG INVERSION; 2.6.3 WEAK INVERSION; 2.6.4 MODERATE INVERSION; 2.7 SMALL - SIGNAL CAPACITANCE; 2.8 SUMMARY OF PROPERTIES OF THE REGIONS OF INVERSION; REFERENCES; PROBLEMS; 3. : THE THREE TERMINAL MOS STRUCTURE; 3.1 INTRODUCTION; 3.2 CONTACTING THE INVERSION LAYER; 3.3 THE BODY EFFECT; 3.4 REGIONS OF INVERSION; 3.4.1 APPROXIMATE LIMITS; 3.4.2 STRONG INVERSION; 3.4.3 WEAK INVERSION; 3.5 A CB CONTROL POINT OF VIEW; 3.5.1 FUNDAMENTALS; 3.5.2 THE PINCHOFF VOLTAGE; REFERENCES; PROBLEMS; 4. : THE FOUR - TERMINAL MOS TRANSISTOR; 4.1 INTRODUCTION; 4.2 TRANSISTOR REGIONS OF OPERATION; 4.3 COMPLETE ALL - REGION MODEL; 4.3.1 CURRENT EQUATIONS; 4.4 SIMPLIFIED ALL - REGION MODELS; 4.4.1 LINEARIZING THE DEPLETION REGION CHARGE; 4.4.2 BODY -REFERENCED SIMPLIFIED ALL - REGION MODELS; 4.4.3 SOURCE - REFERENCED SIMPLIFIED ALL - REGION MODELS; 4.4.4 CHARGE FORMULATION OF SIMPLIFIED ALL-REGION MODELS; 4.5 MODELS BASED ON QUASI - FERMI POTENTIALS; 4.6 REGIONS OF INVERSION IN TERMS OF TERMINAL VOLTAGES; 4.7 STRONG INVERSION; 4.7.1 COMPLETE STRONG -INVERSION MODEL; 4.7.2 BODY - REFERENCED SIMPLIFIED STRONG INVERSION MODEL; 4.7.3 SOURCE - REFERENCED SIMPLIFIED STRONG - INVERSION MODEL; 4.7.4 MODEL ORIGIN SUMMARY; 4.8 WEAK INVERSION; 4.8.1 SPECIAL CONDITIONS IN WEAK INVERSION; 4.9 MODERATE INVERSION AND SINGLE - PIECE MODELS; 4.10 SOURCE - REFERENCED VS. BODY - REFERENCED MODELING; 4.11 EFFECTIVE MOBILITY; 4.12 EFFECT OF EXTRINSIC SOURCE AND DRAIN SERIES RESISTANCES; 4.13 TEMPERATURE EFFECTS; 4.14 BREAKDOWN; 4.15 THE P-CHANNEL MOS TRANSISTOR; 4.16 ENHANCEMENT - MODE AND DEPLETION - MODE TRANSISTORS; 4.17 MODEL PARAMETER VALUES, MODEL ACCURACY, AND MODEL COMPARISON; REFERENCES; PROBLEMS; 5. : SMALL DIMENSION EFFECTS; 5.1 INTRODUCTION; 5.2 CARRIER VELOCITY SATURATION; 5.3 CHANNEL LENGTH MODULATION; 5.4 CHARGE SHARING; 5.4.1 INTRODUCTION; 5.4.2 SHORT - CHANNEL DEVICES; 5.4.3 NARROW - CHANNEL DEVICES; 5.4.4 LIMITATIONS OF CHARGE SHARING MODELS; 5.5 DRAIN - INDUCED BARRIER LOWERING; 5.6 PUNCHTHROUGH; 5.7 COMBINING SEVERAL SMALL - DIMENSION EFFECTS INTO ONE MODEL - A STRONG INVERSION EXAMPLE; 5.8 HOT CARRIER EFFECTS; IMPACT IONIZATION; 5.9 VELOCITY OVERSHOOT AND BALLISTIC OPEATION; 5.10 POLYSILICON DEPLETION; 5.11 QUANTUM MECHANICAL EFFECTS; 5.12 DC GATE CURRENT; 5.13 JUNCTION LEAKAGE; BAND - TO - BAND TUNNELING; GIDL; 5.14 LEAKAGE CURRENTS - EXAMPLES; 5.15 THE QUEST FOR EVER - SMALLER DEVICES; 5.15.1 INTRODUCTION; 5.15.2 CLASSICAL SCALING; 5.15.3 MODERN SCALING; REFERENCES; PROBLEMS; 6. : THE MOS TRANSISTOR IN DYNAMIC OPERATION - LARGE SIGNAL MODELING; 6.1 INTRODUCTION; 6.2 QUASI - STATIC OPERATION; 6.3 TERMINAL CURRENTS IN QUASI - STATIC OPERATION; 6.4 EVALUATION OF INTRINSIC CHARGERS IN QUASI - STATIC OPERATION; 6.4.1 INTRODUCTION; 6.4.2 STRONG INVERSION; 6.4.3 MODERATE INVERSION; 6.4.4 WEAK INVERSION; 6.4.5 ALL - REGION MODEL; 6.4.6 DEPLETION AND ACCUMULATION; 6.4.7 PLOTS OF CHARGERS VERSUS VGS; 6.4.8 USE OF INTRINSIC CHARGERS IN EVALUATION THE TERMINAL CURRENTS; 6.5 TRANSIT TIME UNDER DC CONDITIONS; 6.6 LIMITATIONS OF THE QUASI - STATIC MODEL; 6.7 NON - QUASI - STATIC MODELING; 6.7.1 INTRODUCTION; 6.7.2 THE CONTINUITY EQUATION; 6.7.3 NON - QUASI - STATIC ANALYSIS; 6.8 EXTRINSIC PARASITICS; 6.8.1 EXTRINSIC CAPACITANCES; 6.8.2 EXTRINSIC RESISTANCE; 6.8.3 TEMPERATURE DEPENDENCE; 6.8.4 SIMPLIFIED MODELS; REFERENCES; PROBLEMS; 7. : SMALL - SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES; 7.1 INTRODUCTION; 7.2 A LOW - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART; 7.2.1 INTRODUCTION; 7.2.2 SMALL - SIGNAL MODEL FOR THE DRAIN - SOURCE CURRENT; 7.2.3 SMALL - SIGNAL MODEL FOR THE GATE AND BODY CURRENT; 7.2.4 COMPLETE LOW - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART; 7.2.5 STRONG INVERSION; 7.2.6 WEAK INVERSION; 7.2.7 MODERATE INVERSION; 7.2.8 ALL - REGION MODELS; 7.3 A MEDIUM - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART; 7.3.1 INTRODUCTION; 7.3.2 INTRINSIC CAPACITANCES; 7.4 INCLUDING THE EXTRINSIC PART; 7.5 NOISE; 7.5.1 INTRODUCTION; 7.5.2 WHITE NOISE; 7.5.3 FLICKER NOISE; 7.5.4 NOISE IN EXTRINSIC RESISTANCES; 7.5.5. INCLUDING NOISE IN SMALL - SIGNAL CIRCUITS; 7.6 ALL - REGION MODELS; REFERENCES; PROBLEMS; 8. : HIGH FREQUENCY SMALL - SIGNALS MODELS; 8.1 INTRODUCTION; 8.2 A COMPLETE QUASI - STATIC MODEL; 8.2.1 COMPLETE DESCRIPTION OF INTRINSIC CAPACITANCE EFFECTS; 8.2.2 SMALL - SIGNAL EQUIVALENT CIRCUIT TOPOLOGIES; 8.2.3 EVALUATION OF CAPACITANCES; 8.2.4 FREQUENCY REGION OF VALIDITY; 8.3 Y- PARAMETER MODELS; 8.4 NON - QUASI - STATIC MODELS; 8.4.1 INTRODUCTION; 8.4.2 A NON - QUASI - STATIC STRONG - INVERSION MODEL; 8.4.3 OTHER APPROXIMATION AND HIGHER - ODER MODELS; 8.4.4 MODEL COMPARISON; 8.5 HIGH - FREQUENCY NOISE; 8.6 CONSIDERATION IN MOSFET MODELING FOR RF APPLICATIONS; REFERENCES; PROBLEMS; 9. : SUBSTRATE NONUNIFORMITY AND STRUCTURAL EFFECTS; 9.1 INTRODUCTION; 9.2 ION IMPLANTATION AND SUBSTRATE NONUNIFORMITY; 9.3 SUBSTRATE TRANSVERSE NONUNIFORMITY; 9.3.1 PRELIMINARIES; 9.3.2 THRESHOLD VOLTAGE; 9.3.3 DRAIN CURRENT; 9.3.4 BURIED CHANNEL DEVICES; 9.4 SUBSTRATE LATERAL NONUNIFORMITY; 9.5 WELL PROXIMITY EFFECT; 9.6 STRESS EFFECTS; 9.7 STATISTICAL VARIABILITY; REFERENCES; PROBLEMS; 10. : MOSFET MODELING FOR CIRCUIT SIMULATION; 10.1 INTRODUCTION; 10.2 TYPES OF MODELS; 10.2.1 MODELS FOR DEVICE ANALYSIS AND DESIGN; 10.2.2 DEVICE MODELS FOR CIRCUIT SIMULATION; 10.3 ATTRIBUTES OF GOOD COMPACT MODELS; 10.4 MODEL FORMULATION; 10.5 MODEL IMPLEMENTATION IN CIRCUIT SIMULATORS; 10.6 MODEL TESTING; 10.7 PARAMETER EXTRACTION; 10.8 SIMULATION AND EXTRACTION FOR RF APPLICATIONS; 10.9 COMMON MOSFET MODELS AVAILABLE IN CIRCUIT SIMULATORS; 10.9.1 BSIM; 10.9.2 EKV; 10.9.3 HISIM2; 10.9.4 PSP; REFERENCES; PROBLEMS; APPENDICES; A. BASIC LAWS OF ELECTROSTATIC IN ONE DIMENSION; B. QUASI - FERMI LEVELS AND CURRENTS; C. GENERAL ANALYSIS OF THE TWO - TERMINAL MOS STRUCTURE; D. CAREFUL DEFINITIONS FOR THE LIMITS OF MODERATE INVERSION; E. GENERAL ANALYSIS OF THE THREE - TERMINAL MOS STRUCTURE; F. DRAIN CURRENT FORMULATION USING QUASI - FERMI POTENTIALS; G. MODELING BASED ON PINCHOFF VOLTAGE AND RELATED TOPICS; H. EVALUATION OF THE INTRINSIC TRANSIENT SOURCE AND DRAIN CURRENT; I. QUANTITIES USE IN THE DERIVATION OF THE NON-QUASI -STATIC Y-PARAMETER MODEL; K. ANALYSIS OF BURIED CHANNEL DEVICES; L. MOSFET MODEL BENCHMARK TESTS
