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Fundamentals of Modern VLSI Devices Yuan Taur (IBM T J Watson Research Center, New York)

Fundamentals of Modern VLSI Devices By Yuan Taur (IBM T J Watson Research Center, New York)

Fundamentals of Modern VLSI Devices by Yuan Taur (IBM T J Watson Research Center, New York)


$21.99
Condition - Very Good
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Summary

This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. It can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising microelectronics engineers.

Fundamentals of Modern VLSI Devices Summary

Fundamentals of Modern VLSI Devices by Yuan Taur (IBM T J Watson Research Center, New York)

This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.

Fundamentals of Modern VLSI Devices Reviews

' ... well-written classroom text on VLSI devices ... this book will also prove valuable to practicing designers and researchers because of the many advanced topics included, covers a wide range of material for its size ... The book is logically organized. Both the ideas and the presentation are first-rate. The typesetting and diagrams are superb.' Computing Reviews
'Taur and Ning have written a book that will surely be referenced for many years. it is clear that the authors know what they are talking about (they are both IEEE Fellows and long-time employees of IBM). they draw heavily from their experience of industrial VLSI technology, and cover subjects such as device optimization, trade-offs between power consumption and packing density, and physical limits to scaling.' Carol-Mikael Zetterling, Royal Insitute of Technology, Stockholm
' ... a book that will surely be referenced for many years.' Carl-Mikael Zetterling, Amazon

Table of Contents

1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performance factors; Appendices.

Additional information

GOR013838864
9780521559591
0521559596
Fundamentals of Modern VLSI Devices by Yuan Taur (IBM T J Watson Research Center, New York)
Used - Very Good
Paperback
Cambridge University Press
19981013
496
N/A
Book picture is for illustrative purposes only, actual binding, cover or edition may vary.
This is a used book - there is no escaping the fact it has been read by someone else and it will show signs of wear and previous use. Overall we expect it to be in very good condition, but if you are not entirely satisfied please get in touch with us

Customer Reviews - Fundamentals of Modern VLSI Devices